BDX66 ? a ? b ? c 24/10/2012 comset semiconductors 1/4 p p n n p p silicon darlington power transistor the BDX66, BDX66a, BDX66b and BDX66c are mounted in to-3 metal package. high current power darlingtons designed for power amplification and switching applications. the complementary npn are bdx67, bdx67a, bdx67b, bdx67c. compliance to rohs. absolute maximum ratings symbol ratings value unit -v ceo collector-emitter voltage BDX66 60 v BDX66a 80 BDX66b 100 BDX66c 120 -v cbo collector-base voltage BDX66 60 v BDX66a 80 BDX66b 100 BDX66c 120 -v ebo emitter-base voltage 5.0 v -i c collector current -i c ( rms ) 16 a -i cm 20 -i b base current 0.25 a p t power dissipation @ t c = 25 150 w t j junction temperature -55 to +200 c t s storage temperature thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.17 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX66 ? a ? b ? c 24/10/2012 comset semiconductors 2/4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit -v ceo(sus) collector-emitter breakdown voltage (*) -i c =0.1 a l=25mh BDX66 60 - - v BDX66a 80 - - BDX66b 100 - - BDX66c 120 - - -i ceo collector cutoff current -v ce =30 v BDX66 - - 3 ma -v ce =40 v BDX66a - - -v ce =50 v BDX66b - - -v ce =60 v BDX66c - - -i ebo emitter cutoff current -v be =5 v BDX66 - - 5.0 ma BDX66a BDX66b BDX66c -i cbo collector-base cutoff current -v cb =60 v BDX66 - - 1 ma -v cb =40 v t case =200c - - 5 -v cb =80 v BDX66a - - 1 -v cb =50 v t case =200c - - 5 -v cb =100 v BDX66b - - 1 -v cb =60 v t case =200c - - 5 -v cb =120 v BDX66c - - 1 -v cb =70 v t case =200c - - 5 h fe dc current gain -v ce =3 v - i c =1 a BDX66 - 2000 - - BDX66a BDX66b BDX66c -v ce =3 v - i c =10 a BDX66 1000 - - BDX66a BDX66b BDX66c -v ce =3 v - i c =16 a BDX66 - 1000 - BDX66a BDX66b BDX66c www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX66 ? a ? b ? c 24/10/2012 comset semiconductors 3/4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit -v ce(sat) collector-emitter saturation voltage (*) -i c =10 a -i b =40 ma BDX66 - - 2 v BDX66a BDX66b BDX66c -v be base-emitter voltage(1&2) -v ce =3 v -i c =10 a BDX66 - - 2,5 v BDX66a BDX66b BDX66c v f diode forward voltage i f =10 a BDX66 - 2 - v BDX66a BDX66b BDX66c c 22b i e =0 a, -v cb =-10v f=1 mhz - 300 - pf t on switching characteristics v cc =12v, -i c =10 a -i b1 = i b2 =40 ma - 1 - s t of f - 3.5 - f hfe -v ce =3 v,-i c =5 a BDX66 - 60 - khz BDX66a BDX66b BDX66c (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX66 ? a ? b ? c 24/10/2012 comset semiconductors 4/4 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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